Key benefits — why you need this FRAM Reliable nonvolatile storage that preserves data without a continuous power source, ideal for systems that experience power interruption or operate intermittently. Extremely endurance and long data retention reduce maintenance and replacement costs: supports up to 10 trillion write cycles and retains data for 95 years at room temperature. Instantaneous, bytelevel read/write access delivers DRAMlike speed for individual bytes while providing nonvolatile security of stored data. Simple integration with lowpower designs: optimized for use with low power data loggers and other devices that need buffering when a stable voltage source is not available. Key features and attributes Function: Nonvolatile ferroelectric randomaccess memory (FRAM) that reads and writes each byte instantaneously. Material/technology: Similar to Dynamic RAM (DRAM) in operation but uses a ferroelectric layer instead of a dielectric layer, giving nonvolatile behavior with fast access times. Performance: Read/write endurance up to 10 trillion cycles; data retention approximately 95 years at room temperature. Compatibility: Suited to lowpower data loggers and embedded systems that require reliable buffering and immediate bytelevel access during power interruptions. Access model: Byteaddressable memory with instantaneous read/write on each byte. Practical use scenarios Environmental data logging: Store sensor readings continuously and buffer them during telemetry outages or power fluctuations so no data is lost when connectivity or supply is interrupted. Industrial monitoring and control: Preserve configuration, counters, and critical event logs in machinery and PLCs where power can be unstable and frequent writes are required. IoT and embedded devices: Maintain shortterm logs, calibration data, and state information in lowpower wearable or remote devices that must survive sleeptime or brief power loss without data corruption. How it solves common problems Prevents data loss during power interruptions by keeping stored information without a stable voltage source. Eliminates frequent flash or EEPROM replacement in writeheavy applications thanks to very write endurance. Delivers fast, bytelevel access so systems can update and retrieve small pieces of data quickly without the latency or wear concerns of other nonvolatile memories. Reliability and trust Designed for longterm data retention and extremely write cycles to meet demanding embedded and datalogging applications. Uses proven ferroelectric memory technology to combine DRAMlike speed with nonvolatile persistence for practical, dependable system design.